EUROSOI Virtual Journal
Total articles: 1117
Listing 0 to 50
| Title |
Authors |
Publication |
YEAR/MONTH |
THEME |
| Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device |
Hung HJ, Kuo JB, Chen D, Tsai CT, Yeh C |
SOLID-STATE ELECTRONICS |
2010, 5 |
2 |
| Surface-potential-based compact modeling of dynamically depleted SOI MOSFETs |
Wu WM, Yao W, Gildenblat G |
SOLID-STATE ELECTRONICS |
2010, 5 |
2 |
| Analysis of subthreshold conduction in short-channel recessed source/drain UTB SOI MOSFETs |
Svilicic B, Jovanovic V, Suligoj T |
SOLID-STATE ELECTRONICS |
2010, 5 |
2 |
| Local V-th Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation |
Sugii N, Tsuchiya R, Ishigaki T, Morita Y, Yoshimoto H, Kimura S |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
2010, 4 |
2 |
| A flexible mixed-signal/RF CMOS technology for implantable electronics applications |
Hsieh CY, Chen CS, Tsou WA, Yeh YT, Wen KA, Fan LS |
JOURNAL OF MICROMECHANICS AND MICROENGINEERING |
2010, 4 |
2 |
| Fabrication, structural and electrical properties of (110) localized silicon-on-insulator devices |
Destefanis V, Hartmann JM, Huguenin JL, Delaye V, Samson MP, Boulitreau P, Morand Y, Brianceau P, Arvet C, Gautier P, Monfray S, Skotnicki T |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
2010, 4 |
2 |
| A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors |
Zhang J, Zhang LN, He J, Chan MS |
JOURNAL OF APPLIED PHYSICS |
2010, 3 |
2 |
| Tunneling spectroscopy of electron subbands in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors |
Noborisaka J, Nishiguchi K, Kageshima H, Ono Y, Fujiwara A |
APPLIED PHYSICS LETTERS |
2010, 3 |
2 |
| Silicon on insulator MESFETs for RF amplifiers |
Wilk SJ, Balijepalli A, Ervin J, Lepkowski W, Thornton TJ |
SOLID-STATE ELECTRONICS |
2010, 3 |
2 |
| Monte Carlo study of the electrothermal phenomenon in silicon-on-insulator and silicon-germanium-on-insulator metal-oxide field-effect transistors |
Sadi T, Kelsall RW |
JOURNAL OF APPLIED PHYSICS |
2010, 3 |
2 |
| Systematic study of Schottky barrier MOSFETs with dopant segregation on thin-body SOI |
Urban C, Sandow C, Zhao QT, Knoch J, Lenk S, Mantl S |
SOLID-STATE ELECTRONICS |
2010, 2 |
2 |
| Large-signal analysis of substrate effects in RF-power SOI-LDMOS transistors |
Vestling L, Bengtsson O, Mum KH, Olsson J |
SOLID-STATE ELECTRONICS |
2010, 2 |
2 |
| Multi-Subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI |
Sampedro C, Gamiz F, Godoy A, Valin R, Garcia-Loureiro A, Ruiz FG |
SOLID-STATE ELECTRONICS |
2010, 2 |
2 |
| Hybrid Integration of Ultrathin-Body Partially Insulated MOSFETs and a Bulk MOSFET for Better IC Performance: A Multiple-V-TH Technology Using Partial SOI Structure |
Oh CW, Kim SH, Kim DW, Park D, Kim K |
IEEE ELECTRON DEVICE LETTERS |
2010, 1 |
2 |
| Dimensional effects and scalability of Meta-Stable Dip (MSD) memory effect for 1T-DRAM SOI MOSFETs |
Hubert A, Bawedin M, Cristoloveanu S, Ernst T |
SOLID-STATE ELECTRONICS |
2009 , 12 |
2 |
| Mobility extraction in SOI MOSFETs with sub 1 nm body thickness |
Schmidt M, Lemme MC, Gottlob HDB, Driussi F, Selmi L, Kurz H |
SOLID-STATE ELECTRONICS |
2009 , 12 |
2 |
| Advanced SOI CMOS transistor technology for high performance microprocessors |
Horstmann M, Wiatr M, Wei A, Hoentschel J, Feudel T, Scheiper T, Stephan R, Gerhadt M, Krugel S, Raab M |
SOLID-STATE ELECTRONICS |
2009 , 12 |
2 |
| Equivalent Oxide Thickness of Trigate SOI MOSFETs With High-kappa Insulators |
Ruiz FJG, Tienda-Luna IM, Godoy A, Donetti L, Gamiz F |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
2009 , 11 |
2 |
| Improved current drivability with back-gate bias for elevated source and drain structured FD-SOI SiGe MOSFET |
Choi H, Moon K, Lee C, Cho IH, Hong SJ |
MICROELECTRONIC ENGINEERING |
2009 , 11 |
2 |
| Measurement of effective electron mass in biaxial tensile strained silicon on insulator |
Feste SF, Schapers T, Buca D, Zhao QT, Knoch J, Bouhassoune M, Schindlmayr A, Mantl S |
APPLIED PHYSICS LETTERS |
2009 , 11 |
2 |
| Optimum location of silicide/Si interface in ultra-thin body SOI MOSFETs with recessed and elevated silicide source/drain contact structure |
Kim SD |
SOLID-STATE ELECTRONICS |
2009 , 10 |
2 |
| A Guided Tour of Electronic Design Automation (EDA) for Design of Silicon on Insulator (SOI) SoCs |
Kranen K |
2009 IEEE INTERNATIONAL SOI CONFERENCE |
2009 , 10 |
2 |
| CMOS-SOI-MEMS Transistor for Uncooled IR Imaging |
Gitelman L, Stolyarova S, Bar-Lev S, Gutman Z, Ochana Y, Nemirovsky Y |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
2009, 9 |
2 |
| Compact modeling of a PD SOI MESFET for wide temperature designs |
Balijepalli A, Ervin J, Lepkowski W, Cao Y, Thornton TJ |
MICROELECTRONICS JOURNAL |
2009, 9 |
2 |
| A 2.4-GHz 24-dBm SOI CMOS Power Amplifier with On-Chip Tunable Matching Network for Enhanced Efficiency in Back-Off |
Carrara F, Presti CD, Palmisano G |
2009 PROCEEDINGS OF ESSCIRC |
2009, 9 |
3 |
| Eliminating Back-Gate Bias Effects in a Novel SOI High-Voltage Device Structure |
Luo XR, Fu DP, Lei L, Zhang B, Li ZJ, Hu SD, Zhang ZY, Feng ZC, Yan B |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
2009, 8 |
2 |
| Characterization of current injection mechanism in Schottky-barrier metal-oxide-semiconductor field-effect transistors |
Choi SJ, Han JW, Jang M, Choi C, Choi YK |
APPLIED PHYSICS LETTERS |
2009, 8 |
2 |
| Revisited Pseudo-MOSFET Models for the Characterization of Ultrathin SOI Wafers |
Rodriguez N, Cristoloveanu S, Gamiz F |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
2009, 7 |
2 |
| Analog/RF Performance of Multichannel SOI MOSFET |
Lim TC, Bernard E, Rozeau O, Ernst T, Guillaumot B, Vulliet N, Buj-Dufournet C, Paccaud M, Lepilliet S, Dambrine G, Danneville F |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
2009, 7 |
2 |
| New floating-body effect in partially depleted SOI pMOSFET due to direct-tunneling current in the partial n plus poly gate |
Guegan G, Gwoziecki R, Touret P, Raynaud C, Pretet J, Gonnard O, Gouget G, Deleonibus S |
SOLID-STATE ELECTRONICS |
2009, 7 |
2 |
| A Comparative Study of Carrier Transport for Overlapped and Nonoverlapped Multiple-Gate SOI MOSFETs |
Lee W, Su P |
IEEE TRANSACTIONS ON NANOTECHNOLOGY |
2009, 7 |
2 |
| Hole mobility enhancement by double-gate mode in ultrathin-body silicon-on-insulator p-type metal-oxide-semiconductor field-effect transistors |
Kobayashi S, Saitoh M, Uchida K |
JOURNAL OF APPLIED PHYSICS |
2009, 7 |
2 |
| SOI MESFETs Fabricated Using Fully Depleted CMOS Technologies |
Lepkowski W, Ervin J, Wilk SJ, Thornton TJ |
IEEE ELECTRON DEVICE LETTERS |
2009, 6 |
2 |
| Dual-Material Double-Gate SOI n-MOSFET: Gate Misalignment Analysis |
Sharma RK, Gupta R, Gupta M, Gupta RS |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
2009, 6 |
2 |
| Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability |
Garros X, Rochette F, Andrieu F, Baudot S, Reimbold G, Aulnette C, Daval N, Boulanger F |
JOURNAL OF APPLIED PHYSICS |
2009, 6 |
2 |
| Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates |
Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Claeys C, Simoen E |
SOLID-STATE ELECTRONICS |
2009, 6 |
2 |
| Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates |
Capellini G, Ciasca G, De Seta M, Notargiacomo A, Evangelisti F, Nardone M |
JOURNAL OF APPLIED PHYSICS |
2009, 5 |
2 |
| Analytical models of front- and back-gate potential distribution and threshold voltage for recessed source/drain UTB SOI MOSFETs |
Svilicic B, Jovanovic V, Suligoj T |
SOLID-STATE ELECTRONICS |
2009, 5 |
2 |
| SRAM Voltage and Current Sense Amplifiers in sub-32nm Double-Gate CMOS Insensitive to Process Variations and Transistor Mismatch |
Nasalski P, Makosiej A, Giraud B, Vladimirescu A, Amara A |
ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS |
2009, 5 |
2 |
| On the validity of the effective mass approximation and the Luttinger k.p model in fully depleted SOI MOSFETs |
Rideau D, Feraille M, Michaillat M, Niquet YM, Tavernier C, Jaouen H |
SOLID-STATE ELECTRONICS |
2009, 4 |
2 |
| Simulation of self-heating effects in different SOI MOS architectures |
Braccioli M, Curatola G, Yang Y, Sangiorgi E, Fiegna C |
SOLID-STATE ELECTRONICS |
2009, 4 |
2 |
| Impact of variability on the performance of SOI Schottky barrier MOSFETs |
Feste SF, Zhang M, Knoch J, Mantl S |
SOLID-STATE ELECTRONICS |
2009, 4 |
2 |
| Enhanced photon-induced carrier density in silicon-on-insulator via surface recombination suppression for increasing plasma dispersion effect |
Hsieh MK, Ku KN, Lee MCM |
JOURNAL OF APPLIED PHYSICS |
2009, 4 |
2 |
| The Corbino Pseudo-MOSFET on SOI: Measurements, Model, and Applications |
Cristoloveanu S, Rao TVC, Nguyen QT, Antoszewski J, Hovel H, Gentil P, Faraone L |
IEEE TRANSACTIONS ON ELECTRON DEVICES |
2009, 3 |
2 |
| Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack |
Rochette F, Casse M, Mouis M, Haziot A, Pioger T, Ghibaudo G, Boulanger F |
SOLID-STATE ELECTRONICS |
2009, 3 |
2 |
| Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs |
Rao R, Katti G, Havaldar DS, DasGupta N, DasGupta A |
SOLID-STATE ELECTRONICS |
2009, 3 |
2 |
| High voltage SOI SJ-LDMOS with dynamic back-gate voltage |
Wang WL, Zhang B, Chen WJ, Li ZJ |
ELECTRONICS LETTERS |
2009, 2 |
2 |
| High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistor |
Lazaro A, Cerdeira A, Nae B, Estrada M, Iniguez B |
JOURNAL OF APPLIED PHYSICS |
2009, 2 |
2 |
| C-Band Optical 90 degrees-Hybrids Based on Silicon-on-Insulator 4 x 4 Waveguide Couplers |
Zimmermann L, Voigt K, Winzer G, Petermann K, Weinert CM |
IEEE PHOTONICS TECHNOLOGY LETTERS |
2009, 2 |
2 |
| Proposal for a Grating Waveguide Serving as Both a Polarization Splitter and an Efficient Coupler for Silicon-on-Insulator Nanophotonic Circuits |
Tang YB, Dai DX, He SL |
IEEE PHOTONICS TECHNOLOGY LETTERS |
2009, 2 |
2 |
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