EUROSOI Virtual Journal

Total articles: 1071

Listing 0 to 50

Title	Authors	Publication	YEAR/MONTH	THEME
High voltage SOI SJ-LDMOS with dynamic back-gate voltage	Wang WL, Zhang B, Chen WJ, Li ZJ	ELECTRONICS LETTERS	2009, 2	2
High-frequency compact analytical noise model for double-gate metal-oxide-semiconductor field-effect transistor	Lazaro A, Cerdeira A, Nae B, Estrada M, Iniguez B	JOURNAL OF APPLIED PHYSICS	2009, 2	2
C-Band Optical 90 degrees-Hybrids Based on Silicon-on-Insulator 4 x 4 Waveguide Couplers	Zimmermann L, Voigt K, Winzer G, Petermann K, Weinert CM	IEEE PHOTONICS TECHNOLOGY LETTERS	2009, 2	2
Proposal for a Grating Waveguide Serving as Both a Polarization Splitter and an Efficient Coupler for Silicon-on-Insulator Nanophotonic Circuits	Tang YB, Dai DX, He SL	IEEE PHOTONICS TECHNOLOGY LETTERS	2009, 2	2
Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions	Murray CE, Ren Z, Ying A, Polvino SM, Noyan IC, Cai Z	APPLIED PHYSICS LETTERS	2009, 2	2
Gate-induced floating-body effect (GIFBE) in fully depleted triple-gate n-MOSFETs	Na KI, Cristoloveanu S, Bae YH, Patruno P, Xiong W, Lee JH	SOLID-STATE ELECTRONICS	2009, 2	2
Mobility and Effective Electric Field in Nonplanar Channel MOSFETs	Jeong MK, Lee JH	IEEE TRANSACTIONS ON NANOTECHNOLOGY	2009, 1	2
Dependence of memory margin of Cap-less memory cells on top Si thickness	Choi KR, Lee CH, Kim SJ, Enomoto H, Shim TH, Cho WJ, Park JG	APPLIED PHYSICS LETTERS	2009, 1	2
High-Q bulk-mode SOI square resonators with straight-beam anchors	Khine L, Palaniapan M	JOURNAL OF MICROMECHANICS AND MICROENGINEERING	2009, 1	2
Low-Cost and Highly Heat Controllable Capacitorless PiFET (Partially Insulated FET) 1T DRAM for Embedded Memory	Bae DI, Kim S, Choi YK	IEEE TRANSACTIONS ON NANOTECHNOLOGY	2009, 1	2
Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM	Heidel DF, Marshall PW, Label KA, Schwank JR, Rodbell KP, Hakey MC, Berg MD, Dodd PE, Friendlich MR, Phan AD, Seidleck CM, Shaneyfelt MR, Xapsos MA	IEEE TRANSACTIONS ON NUCLEAR SCIENCE	2008 , 12	2
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation	Doria RT, Cerdeira A, Raskin JP, Flandre D, Pavanello MA	MICROELECTRONICS JOURNAL	2008 , 12	2
Silicon-on-Insulator-Based Radio Frequency Single-Electron Transistors Operating at Temperatures above 4.2 K	Manoharan M, Tsuchiya Y, Oda S, Mizuta H	NANO LETTERS	2008 , 12	2
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs	Pavanello MA, Martino JA, Simoen E, Rooyackers R, Collaert N, Claeys C	SOLID-STATE ELECTRONICS	2008 , 12	2
Analysis of STI-induced mechanical stress-related Kink effect of 40 nm PD SOI NMOS devices biased in saturation region	Lin IS, Su VC, Kuo JB, Chen D, Yeh CS, Tsai CT, Ma M	SOLID-STATE ELECTRONICS	2008 , 12	2
Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations	Yan R, Lynch D, Cayron T, Lederer D, Afzalian A, Lee CW, Dehdashti N, Colinge JP	SOLID-STATE ELECTRONICS	2008 , 12	2
Compact charge and capacitance modeling of undoped ultra-thin body (UTB) SOI MOSFETs	Moldovan O, Chaves FA, Jimenez D, Iniguez B	SOLID-STATE ELECTRONICS	2008 , 12	2
Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors	Ruddell FH, Suder SL, Bain MF, Montgomery JH, Armstrong BM, Gamble HS, Denvir D, Casse G, Bowcock T, Allport PP, Marczewski J, Kucharski K, Tomaszewski D, Niemiec H, Kucewicz W	SOLID-STATE ELECTRONICS	2008 , 12	2
Evaluation of super-critical thickness strained-Si on insulator (sc-SSOI) substrate	Ogura A, Yoshida T, Kosemura D, Kakemura Y, Takei M, Saito H, Shimura T, Koganesawa T, Hirosawa I	SOLID-STATE ELECTRONICS	2008 , 12	2
Realization of High Voltage (> 700 V) in New SOI Devices With a Compound Buried Layer	Luo XR, Li ZJ, Zhang B, Fu DP, Zhan Z, Chen KF, Hu SD, Zhang ZY, Feng ZC, Yan B	IEEE ELECTRON DEVICE LETTERS	2008 , 12	2
Characterization of the Back Interface in Strained-Silicon-on-Insulator Channel and Enhancement of Electrical Properties by Heat Treatment	Jung MH, Kim KS, Cho WJ	IEEE ELECTRON DEVICE LETTERS	2008 , 12	2
Analysis of Hybrid Dielectric Plasmonic Waveguides	Salvador R, Martinez A, Garcia-Meca C, Ortuno R, Marti J	IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS	2008 , 12	2
Generation and Propagation of Single Event Transients in 0.18-mu m Fully Depleted SOI	Gouker P, Brandt J, Wyatt P, Tyrrell B, Soares A, Knecht J, Keast C, McMorrow D, Narasimham B, Gadlage M, Bhuva B	IEEE TRANSACTIONS ON NUCLEAR SCIENCE	2008 , 12	2
Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on Thin-Film SOI Technology	Bellini M, Phillips SD, Diestelhorst RM, Cheng P, Cressler JD, Marshall PW, Turowski M, Avenier G, Chantre A, Chevalier P	IEEE TRANSACTIONS ON NUCLEAR SCIENCE	2008 , 12	2
Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices	Mamouni FE, Dixit SK, Schrimpf RD, Adell PC, Esqueda IS, McLain ML, Barnaby HJ, Cristoloveanu S, Xiong WZ	IEEE TRANSACTIONS ON NUCLEAR SCIENCE	2008 , 12	2
Comparisons of the Hot Carrier Effect in Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Reversed Silicon Wafer Direct Bonding	Matsumoto, Satoshi	JAPANESE JOURNAL OF APPLIED PHYSICS	2008 , 12	2
Compact Modeling of Junction Current in Dynamically Depleted SOI MOSFETs	Wu WM, Yao W, Gildenblat G, Scholten AJ	IEEE TRANSACTIONS ON ELECTRON DEVICES	2008 , 11	2
Growth of Carbon Nanotubes on Fully Processed Silicon-On-insulator CMOS Substrates	Haque MS, Ali SZ, Guha PK, Oei SP, Park J, Maeng S, Teo KBK, Udrea F, Milne WI	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY	2008 , 11	2
A time-dependent technique for carrier recombination and generation lifetime measurement in SOI MOSFET	Zhang G, Yoo WJ, Ling CH	SOLID-STATE ELECTRONICS	2008 , 11	2
Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs	Agopian PGD, Martino JA, Simoen E, Claeys C	SOLID-STATE ELECTRONICS	2008 , 11	2
Low-Loss Polarization-Insensitive Silicon-on-Insulator-Based WDM Filter for Triplexer Applications	Feng NN, Feng D, Liang H, Qian W, Kung CC, Fong J, Asghari M	IEEE PHOTONICS TECHNOLOGY LETTERS	2008 , 11	2
Tunable Monolithic DWDM Band-Selection Interleaver Filter Switch on Silicon-on-Insulator Substrate	Wu ZG, Honda S, Matsui J, Utaka K, Edura T, Tokuda M, Tsutsui K, Wada Y	JOURNAL OF LIGHTWAVE TECHNOLOGY	2008 , 10	2
Static and dynamic electrical performances of STI thin-SOI power LDMOS transistors	Cortes I, Fernandez-Martinez P, Flores D, Hidalgo S, Rebollo J	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	2008, 9	2
A new impact-ionization current model applicable to both bulk and SOI MOSFETs by considering self-lattice-heating	Wei CQ, See GH, Zhou X, Chan L	IEEE TRANSACTIONS ON ELECTRON DEVICES	2008, 9	2
Strain reduction in selectively grown CdTe by MBE on nanopatterned silicon on insulator (SOI) substrates	Bommena R, Seldrum T, Samain L, Sporken R, Sivananthan S, Brueck SRJ	JOURNAL OF ELECTRONIC MATERIALS	2008, 9	2
Gain optimization in ion sensitive field-effect transistor based sensor with fully depleted silicon on insulator	Shalev G, Doron A, Virobnik U, Cohen A, Sanhedrai Y, Levy	APPLIED PHYSICS LETTERS	2008, 8	2
A simple analytical model for the front and back gate threshold voltages of a fully-depleted asymmetric SOI MOSFET	Suh CH	SOLID-STATE ELECTRONICS	2008, 8	2
Ultra-low power full adder circuit using SOI double-gate MOSFET devices	Hassoune I, Yang X, O'Connor I, Navarro D	ELECTRONICS LETTERS	2008, 8	2
Modelling of band-to-band tunnelling in silicon-on-insulator transistor with degenerately doped floating body	Kim KR, Park BG, Dutton RW	ELECTRONICS LETTERS	2008, 8	2
Scaling and optimization of MOS optical modulators in nanometer SOI waveguides	Passaro VMN, Dell'Olio F	IEEE TRANSACTIONS ON NANOTECHNOLOGY	2008, 7	2
New high-voltage (> 1200 V) MOSFET with the charge trenches on partial SOI	Luo XR, Zhang B, Li ZJ	IEEE TRANSACTIONS ON ELECTRON DEVICES	2008, 7	2
Characterization of distribution of trap states in silicon-on-insulator layers by front-gate characteristics in n-channel SOI MOSFETs	Kajiwara K, Nakajima Y, Hanajiri T, Toyabe T, Sugano T	IEEE TRANSACTIONS ON ELECTRON DEVICES	2008, 7	2
Silicon-on-Nothing MOSFETs: An efficient solution for parasitic substrate coupling suppression in SOI devices	Kilchytska V, Flandre D, Raskin JP	APPLIED SURFACE SCIENCE	2008, 7	2
Multi-field simulations and characterization of CMOS-MEMS high-temperature smart gas sensors based on SOI technology	Lu CC, Liao KH, Udrea F, Covington JA, Gardner JW	JOURNAL OF MICROMECHANICS AND MICROENGINEERING	2008, 7	2
6-T SRAM cell design with nanoscale double-gate SOI MOSFETs: impact of source/drain engineering and circuit topology	Rashmi, Kranti A, Armstrong GA	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	2008, 7	2
Graded channel architecture: the solution for misaligned DG FD SOI n-MOSFETs	Sharma RK, Gupta R, Gupta M, Gupta RS	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	2008, 7	2
RF and noise model of gate-all-around MOSFETs	Lazaro A, Íñiguez B	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	2008, 7	2
A 2D simulation study and characterization of a novel vertical SOI MOSFET with a smart source/body tie	Lin JT, Lee TY, Lin KC	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	2008, 7	2
A comparative study on analog/RF performance of UTB GOI and SOI devices	Zhuge J, An X, Huang R, Xiao H, Hou XY, Wang RS, Wang YY	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	2008, 7	2
FinFET reliability study by forward gated-diode generation-recombination current	Ma CY, Li B, Wei YQ, Zhang LM, He J, Zhang X, Lin XN, Chan MS	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	2008, 7	2

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