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Tarragona, Spain
There will be 12 lectures addressing key issues related to the modeling and compact modeling of nanoelectronic devices, with special emphasis on nanoscale SOI and Multi-Gate MOSFETs. Topics addressed are transport, short-channel effects,noise, small-signal modeling, RF, electro-thermal effects and reliability, statistical variability modeling, variability conscious circuit design, parameter
extraction, leakage modeling and Verilog-A compact modeling.
This Training Course is especially suited to students and postdocs working on the physics,characterisation and modeling of nanoscale devices, in particular SOI MOSFETs, but also to thoseworking on technology who are interesting in having a very good picture of the modeling of nanodevices.
Registration is open and cheap. It includes proceedings, two lunches
and a gala dinner.
For more information, and preliminary programme click here.
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