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EUROSOI VIRTUAL JOURNAL
Title: Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs
Autors: Rao R, Katti G, Havaldar DS, DasGupta N, DasGupta ATHEME: Device physics, modelling and simulation
Publication: SOLID-STATE ELECTRONICS
YEAR: 2009 MONTH: MAR
ISI Document Solution number: 426TR 10.1016/j.sse.2008.12.001
ABSTRACT: The paper describes the unified analytical threshold voltage model for non-uniformly doped, dual metal gate (DMG) fully depleted silicon-on-insulator (FDSOI) MOSFETs based on the solution of 2D Poisson's equation. 2D Poisson's equation is solved analytically for appropriate boundary conditions using separation of variables technique. The solution is then extended to obtain the threshold voltage of the FDSOI MOSFET. The model is able to handle any kind of non-uniform doping, viz. vertical, lateral as well as laterally asymetric channel (LAC) profile in the SOI film in addition to the DMG structure. The analytical results are validated with the numerical simulations using the device simulator MEDICI.
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