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EUROSOI VIRTUAL JOURNAL
Title: Revisited Pseudo-MOSFET Models for the Characterization of Ultrathin SOI Wafers
Autors: Rodriguez N, Cristoloveanu S, Gamiz FTHEME: Device physics, modelling and simulation
Publication: IEEE TRANSACTIONS ON ELECTRON DEVICES
YEAR: 2009 MONTH: JUL
ISI Document Solution number: 463LN 10.1109/TED.2009.2021715
ABSTRACT: The pseudo-MOS transistor (Psi-MOSFET) is a simple and successful technique for the monitoring of silicon-on-insulator (SOI) wafer quality. To characterize modern ultrathin films, a reconsideration and review of Psi-MOSFET physics and models is required. Selected numerical simulations are presented, which shed light on the intriguing features governing Psi-MOSFET characteristics. Updated models accounting for the density of interface states and channel-to-surface coupling effects in ultrathin SOI wafers with passivated and nonpassivated surfaces are derived. These analytical models show excellent agreement with measurement and simulation data.
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