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EUROSOI VIRTUAL JOURNAL
Title: A Comparative Study of Carrier Transport for Overlapped and Nonoverlapped Multiple-Gate SOI MOSFETs
Autors: Lee W, Su PTHEME: Device physics, modelling and simulation
Publication: IEEE TRANSACTIONS ON NANOTECHNOLOGY
YEAR: 2009 MONTH: JUL
ISI Document Solution number: 472ZA 10.1109/TNANO.2009.2014865
ABSTRACT: This paper provides a comparative study of carrier transport characteristics for multiple-gate silicon-on-insulator MOSFETs with and without the nonoverlapped source/drain structure. For the overlapped devices, we observed Boltzmann law in subthreshold characteristics and phonon-limited behavior in the inversion regime. For the nonoverlapped devices, however, we found insensitive temperature dependence for drain current in both subthreshold and inversion regimes. Our low-temperature measurements indicate that the intersubband scattering is the dominant carrier transport mechanism for narrow overlapped multigate field-effect transistors (MuGFETs). For the nonoverlapped MuGFETs, the voltage-controlled potential barriers in the nonoverlapped regions may give rise to the weak localization effect (conductance reduction) and the quantum interference fluctuations.
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