|
|
||
|
|
|||
EUROSOI VIRTUAL JOURNAL
Title: Measurement of effective electron mass in biaxial tensile strained silicon on insulator
Autors: Feste SF, Schapers T, Buca D, Zhao QT, Knoch J, Bouhassoune M, Schindlmayr A, Mantl STHEME: Device physics, modelling and simulation
Publication: APPLIED PHYSICS LETTERS
YEAR: 2009 MONTH: NOV
ISI Document Solution number: 518CD 10.1063/1.3254330
ABSTRACT: We present measurements of the effective electron mass in biaxial tensile strained silicon on insulator (SSOI) material with 1.2 GPa stress and in unstrained SOI. Hall-bar metal oxide semiconductor field effect transistors on 60 nm SSOI and SOI were fabricated and Shubnikov-de Haas oscillations in the temperature range of T=0.4-4 K for magnetic fields of B=0-10 T were measured. The effective electron mass in SSOI and SOI samples was determined as m(t)=(0.20 +/- 0.01)m(0). This result is in excellent agreement with first-principles calculations of the effective electron mass in the presence of strain.
|
|
|---|
|
EUROSOI 2011 Granada |
|
EUROSOI 2010 Grenoble |
|
EUROSOI 2009 Chalmers |
|
EUROSOI 2008 Cork |
|
EUROSOI 2007 Leuven |
|
EUROSOI 2006 Grenoble |
|
EUROSOI 2005 Granada |
Pages viewed: 35640
Current Web Administrator: José Luis Padilla
.:: This web site is valid CSS and valid XHTML 1.1 ::.
Recommended screen resolution of 1024x768 or higher
