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EUROSOI VIRTUAL JOURNAL
Title: Mobility extraction in SOI MOSFETs with sub 1 nm body thickness
Autors: Schmidt M, Lemme MC, Gottlob HDB, Driussi F, Selmi L, Kurz HTHEME: Device physics, modelling and simulation
Publication: SOLID-STATE ELECTRONICS
YEAR: 2009 MONTH: DEC
ISI Document Solution number: 534PS 10.1016/j.sse.2009.09.017
ABSTRACT: In this work we discuss limitations of the split-CV method when it is used for extracting carrier mobilities in devices with thin silicon channels like FinFETs, ultra thin body silicon-on-insulator (UTB-SOI) transistors and nanowire MOSFETs. We show that the high series resistance may cause frequency dispersion during the split-CV measurements, which leads to underestimating the inversion charge density and hence overestimating mobility. We demonstrate this effect by comparing UTB-SOI transistors with both recessed-gate UTB-SOI devices and thicker conventional SOI MOSFETs. In addition, the intrinsic high series access resistance in UTB-SOI MOSFETs can potentially lead to an overestimation of the effective internal source/drain voltage, which in turn results in a severe underestimation of the carrier mobility. A specific MOSFET test structure that includes additional 4-point probe channel contacts is demonstrated to circumvent this problem, Finally, we accurately extract mobility in UTB-SOI transistors down to 0.9 nm silicon film thickness (four atomic layers) by utilizing the 4-point probe method and carefully choosing adequate frequencies for the split-CV measurements. It is found that in Such thin silicon film thicknesses quantum mechanical effects shift the threshold voltage and degrade mobility
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