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EUROSOI VIRTUAL JOURNAL
Title: A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Autors: Zhang J, Zhang LN, He J, Chan MSTHEME: Device physics, modelling and simulation
Publication: JOURNAL OF APPLIED PHYSICS
YEAR: 2010 MONTH: MAR
ISI Document Solution number: 570FK 10.1063/1.3319656
ABSTRACT: This paper presents a noncharge-sheet channel potential and drain current model for long-channel dynamic-depletion (DD) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs). Based on the Poisson-Boltzmann equation, an analytical solution of the channel potentials in the front, back silicon/oxide and substrate/oxide interfaces is developed. It is a universal solution which predicts the channel potential accurately in all cases from accumulation to strong inversion. A unified noncharge-sheet drain current expression is derived from the three-interface analysis based on the universal channel potential solution. The proposed model shows excellent agreements with two-dimensional numerical simulations with varying geometrical structures at different device operation regions. This model provides a useful tool to study the device physics and develop a complete compact model for DD SOI MOSFET
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